AO6424

AO6424 30V N-Channel MOSFET General Description The AO6424 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 30V 5A < 31mΩ < 43mΩ TSOP6 Top View Bottom View D Top View D D G Pin1 D D S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG Maximum 30 ±20 5 4 20 1.25 0.8 -55 to 150 Units V V A W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 82 110 56 Max 100 130 70 Units ° C/W ° C/W ° C/W Rev 1: April 2011 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AO6424 C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=4A Forward Transconductance Diode Forward Voltage VDS=5V, ID=5A IS=1A,VGS=0V TJ=125° C 1.2 25 25.5 41 34 15 0.76 1 1.5 255 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1.6 45 35 3.25 5...