10A N-Channel MOSFET
AOT10N60/AOB10N60/AOTF10N60
600V,10A N-Channel MOSFET
General Description
Product Summary
The AOT10N60 & AOB10N60 & A...
Description
AOT10N60/AOB10N60/AOTF10N60
600V,10A N-Channel MOSFET
General Description
Product Summary
The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
TO-220
TO-220F
Top View
TO-263 D2PAK
D
700V@150℃ 10A < 0.75W
D
AOT10N60
S D G
AOTF10N60
S GD
G S
G AOB10N60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT10N60/AOB10N60 AOTF10N60
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM IAR EAR EAS dv/dt
10
10*
7.2
7.2*
36
4.4
290
580 45 5
TC=25°C Power Dissipation B Derate above 25oC
PD
250 2
50 0.4
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RqJA RqCS
AOT10N60/AOB10N60 65 0.5
AOTF10N60 65 --
Maximum Junction-to-Case
RqJC...
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