AOB1100L

AOT1100L/AOB1100L 100V N-Channel Rugged Planar MOSFET General Description The AOT1100L/AOB1100L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100V 130A < 12mΩ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C C TA=25° TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C TC=100° C VGS ID IDM IDSM IAS EAS PD PDSM TJ, TSTG Maximum 100 ±20 130 92 208 8 6 122 744 500 250 2.1 1.3 -55 to 175 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 48 0.22 Max 15 60 0.3 Units ° C/W ° C/W ° C/W 1/6 www.freescale.net.cn Free Datasheet http://www.datasheet4u.com/ AOT1100L/AOB1100L 100V N-Channel Rugged Planar...