AOT11S60

AOT11S60/AOB11S60/AOTF11S60 600V 11A α MOS TM Power Transistor General Description The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 45A 0.399Ω 11nC 2.7µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT11S60L & AOB11S60L & AOTF11S60L Top View TO-220 TO-220F(3kVAC;1s) D TO-263 D2PAK D AOT11S60 G D S G AOTF11S60 D S G AOB11S60 G S S Absolute Maximum Ratings TA=25° C unless otherwise noted AOT11S60/AOB11S60 Parameter Symbol Drain-Source Voltage VDS 600 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TC=25° C TC=100° C VGS ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA 178 1.4 100 20 -55 to 150 300 AOT11S60/AOB11S60 65 0.5 0.7 11 8 45 2 60 120 ±30 AOTF11S60 Units V V ...