AOTF11S60

AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A α MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S60L & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 D Top View TO-220F(3kVAC;1s) TO-263 D2PAK D 700V 45A 0.399Ω 11nC 2.7µJ D AOT11S60L S D G AOTF11S60(L) S GD G S G AOB11S60L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT11S60L/AOB11S60L Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID 11 8 Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS TC=25°C Power Dissipation B Derate above 25oC PD 178 1.4 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT11S60L/AOB11S60L 65 0.5 Maximum Junction-to-Case RθJC 0.7 * Drain current l...