AOB12N50

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT12N50L & AOTF12N50L & AOB12N50L Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 12A < 0.52Ω 100% UIS Tested 100% Rg Tested Top View TO-220 TO-220F D TO-263 D2PAK D G D S AOTF12N50 G D S AOB12N50 G S S AOT12N50 G Absolute Maximum Ratings TA=25° C unless otherwise noted AOT12N50/AOB12N50 Parameter Symbol Drain-Source Voltage VDS 500 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TC=25° C TC=100° C VGS ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS 250 2 -55 to 150 300 AOT12N50/AOB12N50 65 0.5 0.5 12 8.4 48 5.5 454 908 5 ±30 AOTF12N50 Units V V 12* 8.4* A A mJ mJ V/ns W W/ oC ° C ° C AOTF12N50 65 -...