Document
AOT14N50/AOB14N50/AOTF14N50
500V, 14A N-Channel MOSFET
General Description
The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. For Halogen Free add "L" suffix to part number: AOT14N50L & AOTF14N50L & AOB14N50L
Top View TO-220 TO-220F
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 14A < 0.38Ω
100% UIS Tested 100% Rg Tested
TO-263 D2PAK D
D
G D S AOTF14N50 G D S AOB14N50 G S S
AOT14N50
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT14N50/AOB14N50 Drain-Source Voltage 500 VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D
C
AOTF14N50
Units V V
VGS TC=25°C TC=100°C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS 278 2.2 14 11
±30 14* 11* 56 6 540 1080 5 50 0.4 -55 to 150 300 AOT14N50/AOB14N50 65 0.5 0.45 AOTF14N50 65 -2.5
A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W
Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
Rev6: Jul 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
AOT14N50/AOB14N50/AOTF14N50
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Maximum Body-Diode Pulsed Current 1531 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 153 11 1.75 1914 191 16 3.5 42.8 VGS=10V, VDS=400V, ID=14A 9.3 20.3 44 VGS=10V, VDS=250V, ID=14A, RG=25Ω 84 92 50 289 4.93 ID=250µA, VGS=0V, TJ=25° C ID=250µA, VGS=0V, TJ=150° C ID=250µA, VGS=0V VDS=500V, VGS=0V VDS=400V, TJ=125° C VDS=0V, VGS=±30V VDS=5V ID=250µA VGS=10V, ID=7A VDS=40V, ID=7A IS=1A,VGS=0V 3.3 4.2 0.29 20 0.71 1 14 56 2297 229 20 5.3 51 11 24 53 101 110 60 347 6 500 600 0.5 1 10 ±100 4.5 0.38 V V/ oC µA nΑ V Ω S V A A pF pF pF Ω nC nC nC ns ns ns ns ns µC Parameter Conditions Min Typ Max Units
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time IF=14A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=14A,dI/dt=100A/µs,VDS=100V
A. The value of R θJA is measured with the device in a still air environment with T A =25° C. B. The power dissipation PD is based on TJ(MAX)=150° C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150° C, Ratings are based on low frequency and duty cycles to keep initial TJ =25° C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150° C. The SOA curve provides a single pulse ratin g. C G. L=60mH, IAS=6A, VDD=150V, RG=25Ω, Starting TJ=25°
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev6: Jul 2011
www.aosmd.com
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/
AOT14N50/AOB14N50/AOTF14N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 10V 25 20 ID (A) 15 10 5 0 0 5 10 15 20 25 30 VDS (Volts) Fig 1: On-Region Characteristics 0.5 0.5 0.4 VGS=10V 0.4 0.3 0.3 0.2 0 5 10 15 20 25 30 0 -100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 -50 0 50 100 150 200 Temperature (° C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02.