AOT15S65

AOT15S65/AOB15S65/AOTF15S65 650V 15A α MOS TM Power Transistor General Description The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOS TM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 60A 0.29Ω 17.2nC 3.6µJ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter AOT15S65/AOB15S65 VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C C AOTF15S65 650 ±30 15* 10* 60 2.4 86 173 AOTF15S65L Units V V VGS TC=25° C TC=100° C ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOT15S65/AOB15S65 65 0.5 0.6 208 1.7 15 10 15* 10* A A mJ mJ 34 0.3 W o W/ C Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness H Peak diode recovery dv/dt Junction and Storage Temperature Range Maximum lead temperature for soldering J purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D 50 0.4 100 20 -55 to 150 300 AOTF15S65 65 -2.5 V/ns ° C ° C AOTF15S65L 65 -3.7 Units ° C/W ° C/W ° C/W A RθCS Maximum Case-to-sink Maximum Junction-to-Case RθJC * Drain current...