AOB256L

AOB256L 150V N-Channel MOSFET General Description The AOB256L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 150V 19A < 85mΩ < 100mΩ 100% UIS Tested 100% Rg Tested TO-263 D2PAK Top View Bottom View D D D G S G S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Maximum 150 ±20 19 13.5 35 3 2.5 9 4 83 41.5 2.1 1.3 -55 to 175 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG A A mJ W W ° C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 50 1.5 Max 15 60 1.8 Units ° C/W ° C/W ° C/W Rev 0: August 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOB256L...