AOT2608L

AOT2608L/AOB2608L 60V N-Channel MOSFET General Description The AOT2608L/AOB2608L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 60V 72A < 8.0mΩ (< 7.6mΩ∗) 100% UIS Tested 100% Rg Tested TO220 Top View Bottom View D D D Top View TO-263 D2PAK Bottom View D D G G D S S D G G S S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 C Maximum 60 ±20 72 54 180 11 8.5 50 125 100 50 2.1 1.3 -55 to 175 Units V V A VGS TC=25° C C TC=100° TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 48 1.2 Max 15 60 1.5 Units ° C/W ° C/W ° C/W Rev 1 : Mar. 2012 www.ao...