AOB264L

AOT264L/AOB264L 60V N-Channel MOSFET General Description Product Summary The AOT264L/AOB264L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 6V) 100% UIS Tested 100% Rg Tested 60V 140A < 3.2mΩ < 3.5mΩ (< 3.0mΩ∗) (< 3.3mΩ∗) Top View TO220 Bottom View Top View TO-263 D2PAK Bottom View D D D D G DS S DG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG S G Maximum 60 ±20 140 110 480 19 15 100 500 333 167 2.1 1.3 -55 to 175 G S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 12 48 0.35 Max 15 60 0.45 * Surface mount package TO263 D G S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.2. 0: August 2013 www.aosmd.com Page 1 of 6 AOT264L/AOB264L Electrical Characterist...