60V N-Channel MOSFET
AOT264L/AOB264L
60V N-Channel MOSFET
General Description
Product Summary
The AOT264L/AOB264L combines advanced trench...
Description
AOT264L/AOB264L
60V N-Channel MOSFET
General Description
Product Summary
The AOT264L/AOB264L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 6V)
100% UIS Tested 100% Rg Tested
60V 140A < 3.2mΩ < 3.5mΩ
(< 3.0mΩ∗) (< 3.3mΩ∗)
Top View
TO220 Bottom View
Top View
TO-263 D2PAK
Bottom View
D
D
D
D
G DS
S DG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current G
TC=25°C TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
S G
Maximum 60 ±20 140 110 480 19 15 100 500 333 167 2.1 1.3
-55 to 175
G S
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 12 48 0.35
Max 15 60 0.45
* Surface mount package TO263
D
G S
Units V V A
A A mJ W W °C
Units °C/W °C/W °C/W
Rev.2. 0: August 2013
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AOT264L/AOB264L
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