AOTF266L

AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description The AOT266L & AOB266L & AOTF266L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 60V 140A/78A < 3.5mΩ (< 3.2mΩ∗) < 4.0mΩ (< 3.8mΩ∗) 100% UIS Tested 100% Rg Tested Top View TO-220 TO-220F D TO-263 D2PAK D G D S AOTF266L G D S AOB266L G S S AOT266L G Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol AOT266L/AOB266L VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C C AOTF266L Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 268 134 TC=25° C 140 110 ±20 78 55 450 18 14 90 405 45.5 22.5 2.1 1.3 -55 to 175 A A A mJ W W ° C Avalanche energy L=0.1mH C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 Symbol t ≤ 10s Steady-State Steady-State ...