AOB27S60

AOT27S60/AOB27S60/AOTF27S60 600V 27A α MOS TM Power Transistor General Description The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 110A 0.16Ω 26nC 6µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT27S60L & AOB27S60L & AOTF27S60L Top View TO-220 TO-220F(3kVAC;1s) D TO-263 D2PAK D AOT27S60 G D S G AOTF27S60 D S G AOB27S60 G S S Absolute Maximum Ratings TA=25° C unless otherwise noted AOT27S60/AOB27S60 Parameter Symbol Drain-Source Voltage 600 VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TC=25° C TC=100° C VGS ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA 357 2.9 100 20 -55 to 150 300 AOT27S60/AOB27S60 65 0.5 0.35 27 17 110 7.5 110 480 ±30 AOTF27S60 Units V...