80V N-Channel MOSFET
AOT282L/AOB282L
80V N-Channel MOSFET
General Description
The AOT282L & AOB282L uses trench MOSFET technology that is un...
Description
AOT282L/AOB282L
80V N-Channel MOSFET
General Description
The AOT282L & AOB282L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 80V 105A < 3.5mΩ < 5.2mΩ (< 3.2mΩ ) (< 4.9mΩ ∗)
∗
100% UIS Tested 100% Rg Tested
TO220 Top View Bottom View D D Top View
TO-263 D2PAK Bottom View D
D D
G G D S S D G S G S G S
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current
C
Maximum 80 ±20 105 82 420 18.5 14.5 80 320 272.5 136 2.1 1.3 -55 to 175
Units V V A
VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG
A A mJ W W ° C
Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation
A
TC=100° C TA=25° C TA=70° C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 12 48 0.35
Max 15 60 0.5...
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