AOTF288L

AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description The AOT288L & AOB288L & AOTF288L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 80V 46A / 43A < 9.2mΩ(< 8.9mΩ*) <12.5mΩ(< 12.2mΩ*) 100% UIS Tested 100% Rg Tested Top View TO-220 TO-220F D TO-263 D2PAK D G D S AOTF288L G D S AOB288L G S S AOT288L G Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol AOT288L/AOB288L VDS Drain-Source Voltage 80 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C C AOTF288L Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 93.5 46.5 TC=25° C 46 36 ±20 43 30 160 10.5 8 35 61 35.5 17.5 2.1 1.3 -55 to 175 A A A mJ W W ° C Avalanche energy L=0.1mH C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 Symbol t ≤ 10s Steady-State Steady-State R...