100V N-Channel MOSFET
AOT290L/AOB290L
100V N-Channel MOSFET
General Description
Product Summary
The AOT290L/AOB290L uses Trench MOSFET tech...
Description
AOT290L/AOB290L
100V N-Channel MOSFET
General Description
Product Summary
The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
100V 140A < 3.5mΩ
(< 3.2mΩ∗)
Top View D
TO220 Bottom View
D
TO-263 Top View D2PAK
Bottom View
D D
G DS AOT290L
S DG
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
VDS Spike I
10µs
IDSM
IAS, IAR EAS, EAR VSPIKE
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
S AOB290L
S
Maximum 100 ±20 140 110 500 18 15 100 500 120 500 250 2.1 1.3
-55 to 175
G
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
* Surface mount package TO263
t ≤ 10s Steady-State Steady-State
Symb...
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