Document
AOT2910L/AOB2910L/AOTF2910L
100V N-Channel MOSFET
General Description
The AOT2910L & AOB2910L & AOTF2910L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 30A / 22A < 24mΩ (* 23.5mΩ) < 33mΩ (* 32.5mΩ)
100% UIS Tested 100% Rg Tested
Top View TO-220 TO-220F D TO-263 D2PAK D
G D S AOTF2910L G D S AOB2910L G S S
AOT2910L
G
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol AOT2910L/AOB2910L VDS Drain-Source Voltage 100 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current
C C
AOTF2910L
Units V V
VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 50 25 TC=25° C 30 21
±20 22 15.5 80 6.0 4.5 15 11 27 13.5 2.1 1.3 -55 to 175
A
A A mJ W W ° C
Avalanche energy L=0.1mH C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
AOT2910L/AOB2910L 15 60 3
AOTF2910L 15 60 5.5
Units ° C/W ° C/W ° C/W
Rev 0 : Oct. 2012
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Free Datasheet http://www.datasheet4u.com/
AOT2910L/AOB2910L/AOTF2910L
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=100V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS,ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TO220/TO220F VGS=4.5V, ID=18A RDS(ON) Static Drain-Source On-Resistance TO220/TO220F VGS=10V, ID=20A TO263 VGS=4.5V, ID=18A gFS VSD IS Forward Transconductance Diode Forward Voltage TO263 VDS=5V, ID=20A IS=1A,VGS=0V 24.5 18.5 24 40 0.72 1 30 1190 VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.5 95 7 1.1 16.5 VGS=10V, VDS=50V, ID=20A 7 4.5 2.5 7 VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 8 20 3 30 145 1.7 25 12 33 23.5 32.5 TJ=125° C 1.6 80 19 34 24 43 2.15 Min 100 1 5 ±100 2.7 Typ Max Units V µA nA V A mΩ mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On Dela.