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AOTF2910L Dataheets PDF



Part Number AOTF2910L
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 100V N-Channel MOSFET
Datasheet AOTF2910L DatasheetAOTF2910L Datasheet (PDF)

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description The AOT2910L & AOB2910L & AOTF2910L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product.

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AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description The AOT2910L & AOB2910L & AOTF2910L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 30A / 22A < 24mΩ (* 23.5mΩ) < 33mΩ (* 32.5mΩ) 100% UIS Tested 100% Rg Tested Top View TO-220 TO-220F D TO-263 D2PAK D G D S AOTF2910L G D S AOB2910L G S S AOT2910L G Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol AOT2910L/AOB2910L VDS Drain-Source Voltage 100 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C C AOTF2910L Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 50 25 TC=25° C 30 21 ±20 22 15.5 80 6.0 4.5 15 11 27 13.5 2.1 1.3 -55 to 175 A A A mJ W W ° C Avalanche energy L=0.1mH C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC AOT2910L/AOB2910L 15 60 3 AOTF2910L 15 60 5.5 Units ° C/W ° C/W ° C/W Rev 0 : Oct. 2012 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AOT2910L/AOB2910L/AOTF2910L Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=100V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS,ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TO220/TO220F VGS=4.5V, ID=18A RDS(ON) Static Drain-Source On-Resistance TO220/TO220F VGS=10V, ID=20A TO263 VGS=4.5V, ID=18A gFS VSD IS Forward Transconductance Diode Forward Voltage TO263 VDS=5V, ID=20A IS=1A,VGS=0V 24.5 18.5 24 40 0.72 1 30 1190 VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.5 95 7 1.1 16.5 VGS=10V, VDS=50V, ID=20A 7 4.5 2.5 7 VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 8 20 3 30 145 1.7 25 12 33 23.5 32.5 TJ=125° C 1.6 80 19 34 24 43 2.15 Min 100 1 5 ±100 2.7 Typ Max Units V µA nA V A mΩ mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On Dela.


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