100V N-Channel MOSFET
AOT2918L/AOB2918L/AOTF2918L
100V N-Channel MOSFET
General Description
Product Summary
The AOT2918L & AOB2918L & AOTF2...
Description
AOT2918L/AOB2918L/AOTF2918L
100V N-Channel MOSFET
General Description
Product Summary
The AOT2918L & AOB2918L & AOTF2918L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
TO-220
TO-220F
Top View
TO-263 D2PAK
D
100V 90A < 7mΩ
D
AOT2918L
DS G AOTF2918L
S GD
G AOB2918L
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT2918L/AOB2918L
AOTF2918L
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
90 70
260
58 45
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
VDS Spike I
10µs
IDSM
IAS, IAR EAS, EAR VSPIKE
13 10 35 61 120
TC=25°C Power Dissipation B TC=100°C
PD
267 133
41 20
TA=25°C Power Dissipation A TA=70°C
PDSM
2.1 1.33
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbo...
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