AOD4102

AOD4102/AOI4102 30V N-Channel MOSFET General Description The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 19A < 37mΩ < 64mΩ 100% UIS Tested 100% Rg Tested Top View D TO-252 D-PAK Bottom View TO251A IPAK Top View Bottom View D G S G S G D G S S G D S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C C Maximum 30 ±20 19 13 30 8 6.5 9 12 21 10 4.2 2.7 -55 to 175 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C Avalanche energy L=0.3mH TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 20 50 4.5 Max 30 60 7 Units ° C/W ° C/W ° C/W Rev 0: January 2010 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD4102/AOI4102 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=5...