60V N-Channel MOSFET
AOD4130/AOI4130
60V N-Channel MOSFET
General Description
The AOD4130/AOI4130 combines advanced trench MOSFET technology...
Description
AOD4130/AOI4130
60V N-Channel MOSFET
General Description
The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 30A < 24mΩ < 30mΩ
100% UIS Tested 100% Rg Tested
TO252 DPAK TopView Bottom View Top View
TO-251A IPAK
Bottom View
D
D
D
D G
S
D S
G G D
S S D
G
G
S
Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C C TC=100° VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG
Maximum 60 ±20 30 20 74 6.5 5 27 36.5 52 25 2.5 1.6 -55 to 175
Units V V A
A A mJ W W ° C
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 12.4 34 2.4
Max 20 50 2.9
Units ° C/W ° C/W ° C/W
Rev 1: June 2011
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AOD4130/AOI4130
Electrical Characteristics (TJ=25° C unless otherwis...
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