AOD4140 TM N-Channel SDMOS POWER Transistor
General Description
The AOD4140 is fabricated with SDMOSTM trench technology...
AOD4140 TM N-Channel SDMOS POWER
Transistor
General Description
The AOD4140 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. -RoHS Compliant -Halogen Free*
Features
VDS (V) = 25V ID = 43A RDS(ON) <7mΩ RDS(ON) <14mΩ (V GS = 10V) (V GS = 10V) (V GS = 4.5V)
100% UIS Tested! 100% Rg Tested!
Top View D
TO-252 D-PAK
Bottom View
D
G S G S G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain G Current Pulsed Drain Current Avalanche Current
C C C C
Maximum 25 ±20 43 34 120 120 35 61 50 25 2.5 1.6 -55 to 175
Units V V
VGS TC=25°C TC=100°C ID IDM ISM IAR EAR PD PDSM TJ, TSTG
A
Pulsed Forward Diode Current
Repetitive avalanche energy L=50uH TC=25°C Power Dissipation B Power Dissipation
A
mJ W W °C
TC=100°C TA=25°C TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case
B
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC
Typ 14.2 39 2.5
Max 20 50 3
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
AOD4140
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ...
