AOD4142

AOD4142 N-Channel SDMOSTM POWER Transistor General Description The AOD4142 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. -RoHS Compliant -Halogen Free* Features VDS (V) = 25V ID = 50A RDS(ON) < 5.3mΩ RDS(ON) < 9.8mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested! 100% R g Tested! Top View D TO-252 D-PAK Bottom View D G S G S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current C Continuous Drain Current A Avalanche Current C Maximum 25 ±20 50 43 120 17 13 50 63 50 25 2.5 1.6 -55 to 175 Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C IDSM IAR EAR PD PDSM TJ, TSTG TC=25° C ID IDM A Repetitive avalanche energy L=50uH C Power Dissipation B Power Dissipation A C TC=100° C TA=25° TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 41 2.1 Max 20 50 3 Units ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.datasheet4u.com/ AOD4142 C unless otherwise noted) Electrical Characteristics (TJ=25° Sym...