AOD4186

AOD4186 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for low voltage inverter applications. Features VDS (V) =40V ID = 50A RDS(ON) < 15mΩ RDS(ON) < 19mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! Top View D TO-252 D-PAK Bottom View D S G S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Maximum 40 ±20 35 27 70 10 8 24 29 50 25 2.5 1.6 -55 to 175 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG Pulsed Drain Current C A A mJ W W °C TC=100°C TA=25°C TA=70°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16.7 40 2.5 Max 25 50 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.datasheet4u.com/ AOD4186 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=40V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ...