AOD4189

AOD4189 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD4189 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* TO-252 D-PAK Features VDS (V) = -40V ID = -40A (V GS = -10V) RDS(ON) < 22mΩ (VGS = -10V) RDS(ON) < 29mΩ (VGS = -4.5V) 100% UIS Tested! 100% Rg Tested! Top View D Bottom View D G S G S G S Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current B,H Pulsed Drain Current Avalanche Current C C C Maximum -40 ±20 -40 -28 -50 -35 61 62.5 31 2.5 1.6 -55 to 175 Units V V VGS TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG A Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A mJ TC=100°C TA=25°C TA=70°C W Junction and Storage Temperature Range Thermal Characteristics Parameter A,G Maximum Junction-to-Ambient A,G Maximum Junction-to-Ambient Maximum Junction-to-Case D,F °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 41 2 Max 20 50 2.4 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.datasheet4u.com/ AOD4189 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ...