AOD4191L

AOD4191L P-Channel Enhancement Mode Field Effect Transistor General Description The AOD4191 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. The device well suited for high current applications. Features VDS (V) = -40V ID = -34A RDS(ON) < 25mΩ RDS(ON) < 34mΩ (V GS = -10V) (VGS = -10V) (VGS = -4.5V) 100% UIS Tested! 100% R g Tested! -RoHS Compliant -Halogen Free* Top View D TO-252 D-PAK Bottom View D S G S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain Current A Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A C C Maximum -40 ±20 -34 -24 -70 -7 -6 -31 48 50 25 2.5 1.6 -55 to 175 Units V V VGS TC=25°C TC=100°C TC=25°C TC=100°C ID IAR EAR PD PDSM TJ, TSTG ID IDM A A mJ W W °C TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16.7 40 2.5 Max 25 50 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.datasheet4u.com/ AOD4191L Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) ...