AOD514

AOD514/AOI514/AOY514 30V N-Channel AlphaMOS General Description Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 46A < 5.9mW < 11.9mW Application DC/DC Converters in Computing Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested TO252 DPAK: AOD514 TO251A IPAK: AOI514 TO251B (IPAK short lead): AOY514 D TopView Bottom View Top View Bottom View D D DS DG S G S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current G TC=25°C TC=100°C ID 46 36 Pulsed Drain Current C IDM 163 Continuous Drain Current TA=25°C TA=70°C IDSM 17 13 Avalanche Current C IAS 25 Avalanche energy L=0.1mH C EAS 31 VDS Spike 100ns VSPIKE 36 TC=25°C Power Dissipation B TC=100°C PD 50 25 TA=25°C Power Dissipation A TA=70°C PDSM 2.5 1.6 Junction and Storage Temperature Range TJ, TSTG -55 to 175 G G D S Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 16 41 Maximum Junction-to-Case Steady-State RqJC 2.5 Max 20 50 3 S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.6.1: January 2024 www.aosmd.com Page 1 of 6 AOD514/AOI514/AOY51...