30V N-Channel MOSFET
AOD516/AOI516/AOY516
30V N-Channel AlphaMOS
General Description
• Latest Trench Power MOSFET technology • Very Low RDS(...
Description
AOD516/AOI516/AOY516
30V N-Channel AlphaMOS
General Description
Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
Application
DC/DC Converters in Computing Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested 100% Rg Tested
30V 46A < 5mΩ < 10mΩ
TO252 DPAK: AOD516
TopView
Bottom View
TO-251B IPAK: AOI516/AOY516
Top View
Bottom View
D
DD
DS G
DG S
S
D G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS EAS
VDS Spike
100ns
VSPIKE
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 46 36 170 18 14 29 42 36 50 25 2.5 1.6
-55 to 175
G
D S
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 16 41 2.5
Max 20 50 3
G
S
Units V V
A
A A mJ V W
W °C
Units °C/W °C/W °C/W
Rev.5.0: July 2013
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AOD516/AOI516/AOY516
Electrical Characteristics (TJ=25°C unless otherwise...
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