AOY516

AOD516/AOI516/AOY516 30V N-Channel AlphaMOS General Description Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application DC/DC Converters in Computing Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 46A < 5mΩ < 10mΩ TO252 DPAK: AOD516 TopView Bottom View TO-251B IPAK: AOI516/AOY516 Top View Bottom View D DD DS G DG S S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 46 36 170 18 14 29 42 36 50 25 2.5 1.6 -55 to 175 G D S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 16 41 2.5 Max 20 50 3 G S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.5.0: July 2013 www.aosmd.com Page 1 of 6 AOD516/AOI516/AOY516 Electrical Characteristics (TJ=25°C unless otherwise...