AOD528

AOD528 30V N-Channel AlphaMOS General Description Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 50A < 5.4mΩ < 9.5mΩ Application DC/DC Converters in Computing Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested TO252 DPAK TopView Bottom View D D G S D G S D S G Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C Maximum 30 ±20 50 39 163 17 13 25 31 36 50 25 2.5 1.6 -55 to 175 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25° C TC=100° C TA=25° C TA=70° C A A mJ V W W ° C Avalanche energy L=0.1mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16 41 2.5 Max 20 50 3 Units ° C/W ° C/W ° C/W Rev 0: Dec 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD528 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C...