AOD5N50

AOD5N50 500V,5A N-Channel MOSFET General Description The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 600V@150℃ 5A < 1.6Ω 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View Bottom View D D S G S G D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentB Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C H Maximum 500 ±30 5 3.1 17 2.8 118 235 5 104 0.83 -50 to 150 300 Units V V A A mJ mJ V/ns W W/ oC °C °C TC=25°C TC=100°C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Single plused avalanche energy Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter A,G Maximum Junction-to-Ambient Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 43 1 Maximum 55 0.5 1.2 Units °C/W °C/W °C/W Rev0: June 2010 Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD5N50 Electrical Characteristics (TJ=25°C unless otherwise...