AON2260

AON2260 60V N-Channel MOSFET General Description The AON2260 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 60V 6A < 44mΩ < 53mΩ DFN 2x2B Top View S Bottom View D D D S D Pin 1 G D Pin 1 G D S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation A TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG Maximum 60 ±20 6 4.7 30 2.8 1.8 -55 to 150 Units V V A A W ° C Symbol t ≤ 10s Steady-State RθJA Typ 37 66 Max 45 80 Units ° C/W ° C/W Rev 0 : Dec 2011 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AON2260 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=60V, VGS=0V C TJ=55° VDS=VGS，ID=250µA VGS=10V, VDS=5V VGS=10V, ID=6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=4A Forward Transconductance Diode Forward Voltage VDS=5V, ID=6A IS=1A,VGS=0V TJ=125° C 1.5 30 36 61.5 42 21 0.75 1 3.5 426 VGS=0V, VDS=30V, f=1MHz VGS=0...