AON2410

AON2410 30V N-Channel MOSFET General Description The AON2410 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 8A < 21mΩ < 28mΩ DFN 2x2B Top View S Bottom View D D D S D Pin 1 G D Pin 1 G D S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C TA=25° C Power Dissipation A TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG Maximum 30 ±12 8 6 32 2.8 1.8 -55 to 150 Units V V A A W ° C Symbol t ≤ 10s Steady-State RθJA Typ 37 66 Max 45 80 Units ° C/W ° C/W Rev 0 : Dec 2011 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AON2410 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±12V VDS=VGS，ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=8A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=2.5V, ID=4A Forward Transconductance Diode Forward Voltage VDS=5V, ID=8A IS=1A,VGS=0V TJ=125° C 0.6 32 17.1 26 21.2 50 0.7 1 3.5 813 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 98 56 2.3 8 VGS=4.5V, VDS...