AON2705

AON2705 30V P-Channel MOSFET with Schottky Diode General Description The AON2705 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) Typical ESD protection VKA IF VF (at IF=1A) -30V -3.0A < 108mΩ < 165mΩ HBM Class 3A 20V 2A <0.45V Top View DFN 2x2 Bottom View K G S D NC D K G A D A S K Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol MOSFET Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B Schottky reverse voltage Continuous Forward TA=25°C Current A TA=70°C Pulsed Forward Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter: MOSFET Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Parameter: Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A TA=25°C TA=70°C VGS ID IDM VKA IF IFM PD TJ, TSTG 1.5 0.95 -55 to 150 ±20 -3 -2.4 -16 Schottky Units V V A 20 2.5 1.5 15 1.45 0.92 -55 to 150 V A W °C Symbol t ≤ 10s Steady-State RθJA Typ 35 65 36 67 Max 45 85 47 87 Units °C/W °C/W °C/W °C/W t ≤ 10s Steady-State RθJA Rev0: Aug 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON2705 Electrical Characteristics (TJ=25°C unless oth...