Document
AON2707
30V P-Channel MOSFET with Schottky Diode
General Description
The AON2707 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.
Product Summary
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) Typical ESD protection -30V -4A < 117mΩ < 138mΩ < 193mΩ HBM Class 2
VKA IF VF (at IF=1A)
20V 2A <0.45V
Top View
DFN 2x2 Bottom View K G S D NC D K G A
D
A
S
K
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol MOSFET Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B Schottky reverse voltage C Continuous Forward TA=25° Current A TA=70° C
B
Schottky
Units V V A
VGS C TA=25° TA=70° C ID IDM VKA IF IFM PD TJ, TSTG
±12 -4 -3 -15 20 2.5 1.5 15 2.8 1.8 -55 to 150 2.7 1.7 -55 to 150
V A
Pulsed Forward Current TA=25° C Power Dissipation A TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter: MOSFET Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Parameter: Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
W ° C
Symbol
t ≤ 10s Steady-State
RθJA
Typ 35 65 36 67
Max 45 85 47 87
Units ° C/W ° C/W ° C/W ° C/W
t ≤ 10s Steady-State
RθJA
Rev0: Dec. 2012
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Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
AON2707
C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55° C VDS=0V, VGS=±12V VDS=VGS, ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-4A RDS(ON) Static Drain-Source On-Resistance TJ=125° C VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-4A IS=-1A,VGS=0V -0.7 -15 97 138 110 148 9 -0.8 -1 -3.2 305 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 42 26 8.5 6.8 VGS=-10V, VDS=-15V, ID=-4A 3.2 0.75 1.2 6.0 VGS=-10V, VDS=-15V, RL=3.75Ω, RGEN=3Ω IF=-4A, dI/dt=100A/µs 5 21 6.5 15 6 0.4 0.45 0.05 10 0.1 20 34 11 0.8 14 17 12 6 117 165 138 193 -1.05 Min -30 -1 -5 ±10 -1.5 Typ Max Units V µA µA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC V mA mA pF ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs IF=1A VR=5V VR=5V, TJ=125° C VR=16V VR=16V, TJ=125° C VR=10V IF=1A, dI/dt=100A/µs IF=1A, dI/dt=100A/µs
SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm Irm CT trr Qrr Maximum reverse leakage current Maximum reverse leakage current Junction Capacitance Schottky Reverse Recovery Time Schottky Reverse Recovery Charge
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedance from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Dec. 2012
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Page 2 of 6
Free Datasheet http://www.datasheet4u.com/
AON2707
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 -10V -8.0V 10 6 -ID (A) -4.5V -2.5V 5 2 VGS=-2V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 200 Normalized On-Resistance VGS=-2.5V 150 RDS(ON) (mΩ ) VGS=-4.5V 100 VGS=-10V 50 1.6 VGS=-4.5V ID=-2A 1.4 VGS=-10V ID=-4A 1.2 VGS=-2.5V ID=-1A 1 0 0 1 2 3 4 -VGS(Volts) Figure 2: Transfer Characteristics 25°C -ID(A) -6V 8 10 VDS=-5V
4 125°C
0 0 2 4 6 8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 300 ID=-4A 250 200 RDS(ON) (mΩ ) 150 100 25°C 50 0 0 2 4 6 8 10 -VGS .