AON2800

AON2800 20V Dual N-Channel MOSFET General Description The AON2800 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) 20V 4.5A < 47mΩ < 65mΩ ESD Protected DFN 2x2 Package S1 Pin 1 G1 D2 D1 D2 G1 D1 Pin 1 Top Bottom G2 S2 S1 G2 S2 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG Maximum 20 ±8 4.5 3.8 24 1.5 0.95 -55 to 150 Units V V A W ° C Symbol t ≤ 10s Steady-State t ≤ 10s Steady-State RθJA RθJA Typ 35 65 120 175 Max 45 85 155 235 Units ° C/W ° C/W ° C/W ° C/W Rev 1: August 2011 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AON2800 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=20V, VGS=0V C TJ=55° VDS=0V, VGS= ±8V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=4A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=2.5V, ID=3A Forward Transconductance Diode Forward Voltage ...