AON2801

AON2801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AON2801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. RoHS and Halogen-Free Compliant Features VDS (V) = -20V ID = -3A (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) DFN 2x2 Package S1 G1 D2 D1 D2 D1 G2 S2 Top Bottom Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C CurrentA TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Symbol VDS VGS ID IDM PDSM TJ, TSTG G1 G2 S1 S2 Maximum -20 ±8 -3 -2.3 -15 1.5 0.95 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B t ≤ 10s Steady-State t ≤ 10s Steady-State Symbol RθJA RθJA Typ 35 65 120 175 Max 45 85 155 235 Units °C/W °C/W °C/W °C/W Rev.3.0: October 2015 www.aosmd.com Page 1 of 5 AON2801 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current ID=-250µA, VGS=0V VDS=-20V, VGS=0V ...