AON2803

AON2803 20V Dual P-Channel MOSFET General Description The AON2803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) -20V -3.8A < 70mΩ < 90mΩ < 115mΩ DFN 2x2 Package S1 Pin 1 G1 D2 D1 D2 Pin 1 Top D1 G2 S2 G1 S1 G2 S2 Bottom Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation A TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG Maximum -20 ±8 -3.8 -3 -20 1.5 0.95 -55 to 150 Units V V A W ° C Symbol t ≤ 10s Steady-State t ≤ 10s Steady-State RθJA RθJA Typ 35 65 120 175 Max 45 85 155 235 Units ° C/W ° C/W ° C/W ° C/W Rev 0: August 2012 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AON2803 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-20V, VGS=0V C TJ=55° VDS=0V, VGS=±8V VDS=VGS, ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3.8A RDS(ON) Static Drain-Source On-Resistance TJ=125° C VGS=-...