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AON3408 Dataheets PDF



Part Number AON3408
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AON3408 DatasheetAON3408 Datasheet (PDF)

AON3408 N-Channel Enhancement Mode Field Effect Transistor General Description The AON3408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AON3408 is Pb-free (meets ROHS & Sony 259 specifications). Features Features V V (V)==30V 30V DS DS(V) 8.8A (V.

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AON3408 N-Channel Enhancement Mode Field Effect Transistor General Description The AON3408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AON3408 is Pb-free (meets ROHS & Sony 259 specifications). Features Features V V (V)==30V 30V DS DS(V) 8.8A (V (V ==10V) 10V) ID ID==11A GS GS R R <24m 14.5m Ω (V Ω GS (VGS = 10V) = 10V) DS(ON) DS(ON)< R R < < 29m 18m Ω Ω (V (V = = 4.5V) 4.5V) DS(ON) DS(ON) GS GS RDS(ON) < 45mΩ (VGS = 2.5V) Rg,Ciss,Coss,Crss Tested DFN 3x3 Top View Bottom View S S S G D D D D G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead TA=25°C TA=70°C IDSM IDM PDSM TJ, TSTG Maximum 30 ±12 8.5 7.2 40 3.0 1.9 -55 to 150 Units V V A A W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 32 65 25 Max 42 100 35 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.datasheet4u.com/ AON3408 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250uA, V GS=0V VDS=24V, V GS=0V TJ=125°C VDS=0V, VGS= ±12V VDS=VGS ID=250 µA VGS=4.5V, VDS=5V VGS=10V, ID=8.8A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=8A VGS=2.5V, ID=5A gFS VSD IS Forward Transconductance VDS=5V, ID=8.8A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 0.7 40 20 28 23 34.5 26 0.72 1.0 4.0 900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 88 65 0.95 10 VGS=4.5V, VDS=15V, ID=8.5A 1.8 3.75 3.2 VGS=10V, V DS=15V, R L=1.7Ω, RGEN=3Ω IF=8.8A, dI/dt=100A/ µs IF=8.8A, dI/dt=100A/ µs 3.5 21.5 2.7 16.8 8 20 1.5 13 nC nC ns ns ns ns ns nC 1100 24 34 29 45 S V A pF pF pF Ω mΩ 1 Min 30 1 5 100 1.5 Typ Max Units V uA nA V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. 8.5 B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. 0.0 C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. 40 A E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve #DIV/0! provides a single pulse rating. Rev0:Oct. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.datasheet4u.com/ AON3408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 40 ID (A) 30 2.5V 20 10 0 0 1 2 10V 4.5V 3V ID(A) 16 VDS=5V 20 12 0.7 8 125°C 1 1 uA 5 100 nA 1.5 25°C 24 36.0 29.0 40 20 30.0 23 34.5 0 0.5 1 VGS=10V, ID=8.5A VGS =2V VGS =4.5V, ID=8.5A 4 VGS=2.5V, ID=5A V =11A DS=5V, ID 3 4 5 VDS (Volts) Maximum Body-Diode Continuous Current Figure 1: On-Region Characteristics 0 45 2 2.5 VGS(Volts) 4.5 Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance 26 1.5 0.72 1 3 28 26 RDS(ON) (mΩ ) 24 22 20 18 16 0 5 10 ID (A) IFDrain =8.5A, dI/dt=100A/ µs Figure 3: On-Resistance vs. Current and Gate Voltage VGS=4.5V 1.5 900 1100 88 65 ID=8A 0.95 1.5 VGS=4.5V 10 1.8 3.75 3.2 3.5 21.5 2.7 50 75 16.8 VGS=10V ID=8.8A Qg VGS=10V, VDS=15V, ID=8.5A 1.2 GS VGS=10V V =10V, VDS=15V, RL=1.8 Ω, RGEN=3Ω 0.9 0.6 IF=8.5A, dI/dt=100A/µs 15 20 -50 -25 0 25 100 125 150 175 Temperature (°C) 8 Figure 4: On-Resistance vs. Junction Temperature 60 55 50 45 RDS(ON) (mΩ ) 40 35 125°C ID=8.8A 8.5 1.0E+01 0.0 A 125°C 1.0E+00 40 .


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