AOWF12N65

AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 750V@150℃ 12A < 0.72Ω 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View Top View TO-262F Bottom View D G AOW12N65 D S S D G S D G AOWF12N65 S D G G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter AOW12N65 AOWF12N65 Symbol Drain-Source Voltage VDS 650 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TC=25° C TC=100° C VGS ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS AOW12N65 65 0.5 0.45 278 2.2 -55 to 150 300 AOWF12N65 65 -4.5 12 7.7 48 5 375 750 5 28 0.22 ±30 12* 7.7* Units V V A A mJ mJ V/ns W W/ oC ° C ° C Units ° C/W ° C/W ° C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain...