AOWF14N50

AOW14N50/AOWF14N50 500V, 14A N-Channel MOSFET General Description Product Summary The AOW14N50 & AOWF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Top View TO-262 Bottom View Top View TO-262F Bottom View 600V@150℃ 14A < 0.38Ω D G G DS G SD S GD G SD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOW14N50 AOWF14N50 Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 14 11 56 6 540 1080 5 14* 11* TC=25°C Power Dissipation B Derate above 25oC PD 278 28 2.2 0.22 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOW14N50 65 0.5 AOWF14N50 65 -- Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 0.45 4.5 S Units V ...