AOW2918

AOW2918 100V N-Channel MOSFET General Description The AOW2918 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100V 90A < 7mΩ 100% UIS Tested 100% Rg Tested TO-262 Top View D Bottom View G G D S S D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Maximum 100 Units V Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C C TC=25° Power Dissipation B Power Dissipation A TC=100° C C TA=25° TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C VGS C TC=25° TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG ±20 90 70 260 13 10 35 61 267 133 2.1 1.33 -55 to 175 V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 50 0.45 Max 15 60 0.56 Units ° C/W ° C/W ° C/W Rev 0 : Aug 2011 Page 1 of 6 Free Datasheet http://www.datasheet...