IPD800N06N G
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enh...
IPD800N06N G
OptiMOS® Power-
Transistor
Features For fast switching converters and sync. rectification N-channel enhancement - normal level 175 °C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant
Product Summary V DS R DS(on),max ID 60 80 16 V mΩ A
Type
IPD800N06N G
Package Marking
PG-TO252-3 800N06N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1)
Value 16 11 64 43 6 ±20
Unit A
I D,pulse E AS dv /dt V GS P tot T j, T stg
T C=25 °C1) I D=16 A, R GS=25 Ω I D=16 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C
mJ kV/µs V W °C
T C=25 °C
47 -55 ... 175 55/175/56
See figure 3
Rev.1.3
page 1
2008-09-01
Free Datasheet http://www.datasheet4u.com/
IPD800N06N G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=16 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-sourc...