IPD80P03P4L-07
OptiMOS®-P2 Power-Transistor
Product Summary V DS R DS(on) ID -30 6.8 -80 V mΩ A
Features • P-channel ...
IPD80P03P4L-07
OptiMOS®-P2 Power-
Transistor
Product Summary V DS R DS(on) ID -30 6.8 -80 V mΩ A
Features P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection PG-TO252-3-11
Type IPD80P03P4L-07
Package PG-TO252-3-11
Marking 4P03L07
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25°C, V GS=-10V1) T C=100°C, V GS=-10V2) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=-40A T C=25 °C Value Unit A
-80
-65 -320 135 -80 +5/-16 88 -55 ... +175 55/175/56 mJ A V W °C
Rev. 1.0
page 1
2008-07-30
Free Datasheet http://www.datasheet4u.com/
IPD80P03P4L-07
Parameter
Symbol
Conditions min.
Values typ. max.
Unit
Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= -1mA V GS(th) I DSS V DS=V GS, I D=-130µA V DS=-24V, V GS=0V, T j=25°C V DS=-24V, V GS=0V, T j=12...
