KIA50N06

KIA 50 Amps, 60 Volts N-CHANNEL MOSFET ：13641469108 QQ:543158798 50N06 SEMICONDUCTORS 1.Description The KIA50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching 2. Features RDS(ON)=23mΩ@VGS=10V. Ultra low gate charge (typical 30nC) Low reverse transfer capacitance Fast switching capability 100％ avalanche energy specified Improved dv/dt capability 3. Pin configuration Pin 1 2 3 Function Gate Drain Source 1 of 9 Free Datasheet http://www.datasheet4u.com/ KIA 50 Amps, 60 Volts N-CHANNEL MOSFET 50N06 SEMICONDUCTORS 6. Absolute maximum ratings Parameter Drain to source voltage Gate to source voltage TJ=25 ºCID50A Continuous drain current TJ=100 ºCID35A Drain current pulsed (note1)IDM200A Single pulsed avalanche energy (note2)EAS480mJ Repetitive avalanche energy (note1)EAR13mJ Peak diode recovery dv/dt (note3)dv/dt7V/ns Total power dissipation(TJ=25 ºC)PD130W Derating factor above 25 ºCPD0.9W/ ºC Operating junction temperatureTJ-55 ~ +150ºC Storage temperatureTSTG-55 ~ +150ºC Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SymbolValueUnit VDSS60V VGSS±20V 3. Thermal resistance Parameter Thermal resistan...