IRG4PC20UPBF

PD - 97289 IRG4PC20UPbF PROVISIONAL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A n-channel C E C G TO-247AC Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs G Gate Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @TC = 25°C PD @TC = 100°C TJ TSTG Collector-toEmitter Breakdown Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Power Dissipation Power Dissipation C Collector Max. 600 13 6.5 52 52 ±20 5.0 60 24 -55 to + 150 E Emitter Units V A c d e V mJ W Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw °C 300 (0.063 in.) (1.6mm from case) 10lb in (1.1N m) x x N Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weig...