SGP15N120

SGP15N120 SGW15N120 Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation Short circuit withstand time – 10 μs Designed for: - Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-220-3-1 Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-247-3 Type SGP15N120 SGW15N120 VCE IC 1200V 15A 1200V 15A Eoff 1.5mJ 1.5mJ Tj 150°C 150°C Marking Package GP15N120 PG-TO-220-3-1 SGW15N120 PG-TO-247-3 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C Short circuit withstand time2 VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Symbol VCE IC ICpuls - VGE EAS tSC Ptot Tj , Tstg - Value Unit 1200 V A 30 15 52 52 ±20 V 85 mJ 10 μs 198 W -55...+150 °C 260 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.5 Febr. 08 Thermal Resistance...