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IKW15N120T2 Dataheets PDF



Part Number IKW15N120T2
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet IKW15N120T2 DatasheetIKW15N120T2 Datasheet (PDF)

IKW15N120T2 TrenchStop® 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel Emitter Controlled Diode C  Short circuit withstand time – 10s  Designed for : - Frequency Converters - Uninterrupted Power Supply  TrenchStop® 2nd generation for 1200 V applications offers : G E - very tight parameter distribution - high ruggedness, temperature stable behavior  Easy paralleling capability due to positive temperature.

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IKW15N120T2 TrenchStop® 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel Emitter Controlled Diode C  Short circuit withstand time – 10s  Designed for : - Frequency Converters - Uninterrupted Power Supply  TrenchStop® 2nd generation for 1200 V applications offers : G E - very tight parameter distribution - high ruggedness, temperature stable behavior  Easy paralleling capability due to positive temperature coefficient in VCE(sat)  Low EMI PG-TO-247-3  Low Gate Charge  Very soft, fast recovery anti-parallel Emitter Controlled HE Diode  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code IKW15N120T2 1200V 15A 1.75V 175C K15T1202 Maximum Ratings Parameter Symbol Collector-emitter voltage DC collector current (Tj = 150°C) TC = 25C TC = 110C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  1200V, Tj  175C Diode forward current (Tj = 150°C) TC = 25C TC = 110C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC  600V, Tj, start  175C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Wavesoldering only, temperature on leads only VCE IC ICpuls - IF IFpuls VGE tSC Ptot Tj Tstg - Package PG-TO-247-3 Value 1200 30 15 60 60 25 15 60 20 10 235 -40...+175 -55...+150 260 Unit V A V s W C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 1 Rev. 2.2 12.06.2013 IKW15N120T2 TrenchStop® 2nd generation Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Symbol RthJC RthJCD RthJA Conditions Max. Value 0.63 1.12 40 Unit K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance Symbol Conditions V(BR)CES VGE=0V, IC=500µA VCE(sat) VGE = 15V, IC=15A Tj=25C Tj=150C Tj=175C VF VGE=0V, IF=15A Tj=25C Tj=150C Tj=175C VGE(th) ICES IC=0.6mA,VCE=VGE VCE=1200V, VGE=0V Tj=25C Tj=150C Tj=175C IGES gfs VCE=0V,VGE=20V VCE=20V, IC=15A min. 1200 - 5.2 - Value typ. - 1.7 2.1 2.2 1.75 1.8 1.75 5.8 8 Unit max. -V 2.2 - 2.2 - 6.4 mA 0.4 4.0 20 600 nA -S IFAG IPC TD VLS 2 Rev. 2.2 12.06.2013 IKW15N120T2 TrenchStop® 2nd generation Series Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Ciss Coss Crss QGate Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) LE IC(SC) VCE=25V, VGE=0V, f=1MHz VCC=960V, IC=15A VGE=15V VGE=15V,tSC10s VCC = 600V, Tj,start = 25C Tj,start = 175C - - - 1000 100 56 93 13 82 60 - pF - nC - nH -A Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during tb td(on) tr td(off) tf Eon Eoff Ets trr Qrr Irrm dirr/dt Tj=25C, VCC=600V,IC=15A, VGE=0/15V, RG=41.8, L2)=126nH, C2)=34pF Energy losses include “tail” and diode reverse recovery. Tj=25C, VR=600V, IF=15A, diF/dt=450A/s min. - - Value typ. 32 25 362 95 1.25 0.8 2.05 300 1.3 10 215 Unit max. - ns - mJ - - ns µC A - A/s 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Leakage inductance L  a nd Stray capacity C  due to dynamic test circuit in Figure E. IFAG IPC TD VLS 3 Rev. 2.2 12.06.2013 IKW15N120T2 TrenchStop® 2nd generation Series Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during tb td(on) tr td(off) tf Eon Eoff Ets trr Qrr Irrm dirr/dt Tj=175C VCC=600V,IC=15A, VGE=0/15V, RG= 41.8, L1)=315nH, C1)=34pF Energy losses include “tail” and diode reverse recovery. Tj=175C VR=600V, IF=15A, diF/dt=460A/s min. - - Value typ. 31 30 450 176 1.5 1.3 2.8 460 2.65 13 123 Unit max. - ns - mJ - -.


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