Document
IKW15N120T2
TrenchStop® 2nd generation Series
Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology
with soft, fast recovery anti-parallel Emitter Controlled Diode
C
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply TrenchStop® 2nd generation for 1200 V applications offers :
G E
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Easy paralleling capability due to positive temperature coefficient in VCE(sat)
Low EMI
PG-TO-247-3
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE Diode Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW15N120T2 1200V 15A
1.75V
175C K15T1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage DC collector current (Tj = 150°C) TC = 25C TC = 110C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 175C Diode forward current (Tj = 150°C) TC = 25C TC = 110C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC 600V, Tj, start 175C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Wavesoldering only, temperature on leads only
VCE IC
ICpuls -
IF
IFpuls VGE tSC
Ptot
Tj Tstg -
Package PG-TO-247-3
Value 1200
30 15 60 60
25 15 60 20 10
235
-40...+175 -55...+150
260
Unit V A
V s W C
1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.2 12.06.2013
IKW15N120T2
TrenchStop® 2nd generation Series
Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient
Symbol RthJC RthJCD RthJA
Conditions
Max. Value 0.63 1.12 40
Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage Zero gate voltage collector current
Gate-emitter leakage current Transconductance
Symbol
Conditions
V(BR)CES VGE=0V, IC=500µA
VCE(sat) VGE = 15V, IC=15A
Tj=25C
Tj=150C
Tj=175C
VF VGE=0V, IF=15A Tj=25C
Tj=150C
Tj=175C
VGE(th) ICES
IC=0.6mA,VCE=VGE VCE=1200V, VGE=0V Tj=25C Tj=150C Tj=175C
IGES gfs
VCE=0V,VGE=20V VCE=20V, IC=15A
min.
1200
-
5.2
-
Value typ.
-
1.7 2.1 2.2
1.75 1.8 1.75 5.8
8
Unit max.
-V
2.2 -
2.2 -
6.4 mA
0.4 4.0 20 600 nA
-S
IFAG IPC TD VLS
2
Rev. 2.2 12.06.2013
IKW15N120T2
TrenchStop® 2nd generation Series
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge
Ciss Coss Crss QGate
Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1)
LE IC(SC)
VCE=25V, VGE=0V, f=1MHz VCC=960V, IC=15A VGE=15V
VGE=15V,tSC10s VCC = 600V, Tj,start = 25C Tj,start = 175C
-
-
-
1000 100 56 93
13
82 60
- pF - nC
- nH
-A
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during tb
td(on) tr td(off) tf Eon Eoff Ets
trr Qrr Irrm dirr/dt
Tj=25C, VCC=600V,IC=15A, VGE=0/15V, RG=41.8, L2)=126nH, C2)=34pF Energy losses include “tail” and diode reverse recovery.
Tj=25C, VR=600V, IF=15A, diF/dt=450A/s
min.
-
-
Value typ.
32 25 362 95 1.25 0.8 2.05
300 1.3 10 215
Unit max.
- ns - mJ -
- ns µC A
- A/s
1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
3
Rev. 2.2 12.06.2013
IKW15N120T2
TrenchStop® 2nd generation Series
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during tb
td(on) tr td(off) tf Eon Eoff Ets
trr Qrr Irrm dirr/dt
Tj=175C VCC=600V,IC=15A, VGE=0/15V, RG= 41.8, L1)=315nH, C1)=34pF Energy losses include “tail” and diode reverse recovery.
Tj=175C VR=600V, IF=15A, diF/dt=460A/s
min.
-
-
Value typ.
31 30 450 176 1.5 1.3 2.8
460 2.65 13 123
Unit max.
- ns - mJ -
-.