DTU40N06. 40N06 Datasheet

40N06 DTU40N06. Datasheet pdf. Equivalent

Part 40N06
Description DTU40N06
Feature N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 www.din-tek.jp DTU40N06 FEATURES ID (A) 40.
Manufacture Din-Tek
Datasheet
Download 40N06 Datasheet



40N06
N-Channel 60-V (D-S) MOSFET
DTU40N06
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
60 0.016 @ VGS = 10 V
TO-252
ID (A)
40
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% Rg Tested
D
GDS
Top View
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IS
IAR
EAR
PD
TJ, Tstg
60
"20
40
30
60
40
40
80
136b
3a
55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
t v 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
V
A
mJ
W
_C
Unit
_C/W
1
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40N06
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125_C
VDS = 60 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 40 A
VGS = 10 V, ID = 40 A, TJ = 125_C
VGS = 10 V, ID = 40 A, TJ = 175_C
VDS = 15 V, ID = 40 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, F = 1 MHz
VDS = 40 V, VGS = 10 V, ID = 40 A
VDD = 40 V, RL = 1.0 W
ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
Diode Forward Voltageb
Source-Drain Reverse Recovery Time
ISM
VSD
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
IF = 40 A, VGS = 0 V
IF = 40 A, di/dt = 100 A/ms
DTU40N06
www.din-tek.jp
Min Typa Max Unit
60
V
2.0 4.0
"100
nA
1
50 mA
250
40 A
0.013
0.016
0.027
0.037
W
45 S
1960
370 pF
200
42 60
7 nC
13
0.5 2.7 W
12 20
52 80
25 38 ns
10 15
40 A
1.0 1.5 V
45 70 ns
2
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