DTU40N06
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
60
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DTU40N06
FEATURES
ID (A)
40
rDS(on) (W)
0.016 ...
Description
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
60
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DTU40N06
FEATURES
ID (A)
40
rDS(on) (W)
0.016 @ VGS = 10 V
D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested
TO-252
D
G G D S
Top View S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IS IAR EAR PD TJ, Tstg
Limit
60 "20 40 30 60 40 40 80 136b 3a −55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient J ti t A bi ta Junction-to-Case Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. t v 10 sec Steady State
Symbol
RthJA RthJC
Typical
15 40 0.85
Maximum
18 50 1.1
Unit
_C/W
1
Free Datasheet http://www.datasheet4u.com/
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SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage g Drain Current On-State Drain Currentb IDSS ID(on) VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ...
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